SMD Type
Low Frequency
Transistor 2SB1386
Transistors
Features
Low VCE(sat).
VCE(sat) = -0.
35V (Typ.
) (IC/IB = -4A / -0.
1A) Excellent DC current gain Epitaxial planar type
PNP silicon
transistor
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms
Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg
Rating -30 -20 -6 -5 -10 0.
5 150
-55 to +150
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff ...