2SA1431
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications 2SA1431 Unit: mm • High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = ...
Toshiba Semiconductor