Ordering number:EN2524A
PNP Epitaxial Planar Silicon
Transistor
2SA1437
High-hFE, AF Amplifier Applications
Applications
· AF amplifier, various drivers, muting circuit.
Features
· Very small-sized package permitting sets to be made smaller and slimer.
· Adoption of FBET process.
· High DC current gain : (hFE=400 to 1000).
· High breakdown voltage : (VCEO≥100V).
· Low collector-to-emitter saturation voltage
: (VCE(sat)≤0.
5V).
· High VEBO : (VEBO≥15V).
· Small Cob : (Cob=4.
0pF typ).
Package Dimensions
unit:mm 2003A
[2SA1437]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cur...