Ordering number:EN2456
PNP Epitaxial Planar Silicon
Transistor
2SA1436
High hFE, AF Amplifier Applications
Applications
· AF amplifier, various drivers, muting circuit.
Features
· Adoption of MBIT process.
· High DC current gain (hFE=500 to 1200).
· Large current capacity.
· Low collector-to-emitter saturation voltage
(VCE(sat)=0.
5V max).
· High VEBO (VEBO≥15V).
Package Dimensions
unit:mm 2003A
[2SA1436]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
T...