Ordering number:EN1856A
PNP Epitaxial Planar Silicon
Transistor
2SA1435
High hFE, AF Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers, muting circuits.
Features
· Adoption of MBIT process.
· High DC current gain (hFE=500 to 1200).
· Large current capacity.
· Low colletor-to-emitter saturation voltage
(VCE(sat)≤0.
5V max).
· High VEBO (VEBO≥15V).
Package Dimensions
unit:mm 2003A
[2SA1435]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCE...