Huajing Discrete Devices Silicon N-Channel Power MOSFET
○R
CS8N65F A9H
General Description:
CS8N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 8 45 0.
9
performance and enhance the avalanche energy.
The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤1.
3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanch...