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CS8N65FA9H

HUAJING MICROELECTRONICS
Part Number CS8N65FA9H
Manufacturer HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Published May 20, 2015
Detailed Description Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS8N65F A9H General Description： CS8N65F A9H, the silicon N...
Datasheet PDF File CS8N65FA9H PDF File

CS8N65FA9H
CS8N65FA9H

Overview
Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS8N65F A9H General Description： CS8N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 8 45 0.
9 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤1.
3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanch...


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