IPB180N04S4-00
OptiMOS®-T2 Power-
Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested
Product Summary V DS R DS(on) ID
40 V 0.
98 mΩ 180 A
PG-TO263-7-3
Type IPB180N04S4-00
Package PG-TO263-7-3
Marking 4N0400
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2) Avalanche energy, single pulse2)
I D,pulse E AS
T C=25 °C I D=90 A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
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