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IPB180N04S4-00

Infineon
Part Number IPB180N04S4-00
Manufacturer Infineon
Description Power-Transistor
Published May 23, 2015
Detailed Description IPB180N04S4-00 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C ...
Datasheet PDF File IPB180N04S4-00 PDF File

IPB180N04S4-00
IPB180N04S4-00

Overview
IPB180N04S4-00 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on) ID 40 V 0.
98 mΩ 180 A PG-TO263-7-3 Type IPB180N04S4-00 Package PG-TO263-7-3 Marking 4N0400 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T C=25 °C I D=90 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 180 180 720 1250 180 ±20 300 -55 .
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+175 55/175/56 Unit A mJ A V W °C Rev.
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0 page 1 2010-04-06 IPB180N04S4-00 Parameter Symbol Conditions Thermal characteristi...


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