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IPD100N06S4-03

Part Number IPD100N06S4-03
Manufacturer Infineon
Description Power-Transistor
Published May 27, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
Datasheet IPD100N06S4-03





Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon • Ultra High ID IPD100N06S4-03 Product Summary V DS R DS(on),max ID 60 V 3.
5 mΩ 100 A PG-TO252-3-11 Type IPD100N06S4-03 Package Marking PG-TO252-3-11 4N0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=50A Avalanche current, single pulse I AS - Gate source ...






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