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IPD100N06S4-03

Infineon
Part Number IPD100N06S4-03
Manufacturer Infineon
Description Power-Transistor
Published May 27, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
Datasheet PDF File IPD100N06S4-03 PDF File

IPD100N06S4-03
IPD100N06S4-03

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon • Ultra High ID IPD100N06S4-03 Product Summary V DS R DS(on),max ID 60 V 3.
5 mΩ 100 A PG-TO252-3-11 Type IPD100N06S4-03 Package Marking PG-TO252-3-11 4N0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=50A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 100 100 400 300 100 ±20 150 -55 .
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+175 55/175/56 Unit A mJ A V W °C − Rev.
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0 page 1 2010-02-11 IPD100N06S4-03 Parameter Symbol Conditions ...


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