Ordering number:EN3824 Features · Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Meets radial taping.
N-Channel Silicon MOSFET 2SK1729 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1729] 2.
5 1.
45 6.
9 1.
0 4.
0 1.
0 4.
5 1.
0 0.
9 1 Specifications 2.
54 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain...

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