Part Number
|
TM4953FS |
Manufacturer
|
TECH MOS |
Description
|
Dual P-Channel High Density Trench MOSFET |
Published
|
Jun 3, 2015 |
Detailed Description
|
TECH MOS Technology. Dual P-Channel High Density Trench MOSFET
TM4953S TM4953FS(Pb-free)
PRODUCT SUMMARY
VDSS
ID RDS...
|
Datasheet
|
TM4953FS
|
Overview
TECH MOS Technology.
Dual P-Channel High Density Trench MOSFET
TM4953S TM4953FS(Pb-free)
PRODUCT SUMMARY
VDSS
ID RDS(on) (m-ohm) Max
- 30V
- 4.
9A - 3.
6A
53 @ VGS = - 10V 95 @ VGS = - 4.
5V
FEATURES
●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.
So-8
D1 D1 D2 D2
876 5
1 1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C -Pulse b
Drain-Source Diode Forward Currenta Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM IS PD
TJ,TSTG
Limit
-30 ± 20 - 4.
9 - 20 - 1.
7 2.
0
- ...
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