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TM4953S

TECH MOS
Part Number TM4953S
Manufacturer TECH MOS
Description Dual P-Channel High Density Trench MOSFET
Published Jun 3, 2015
Detailed Description TECH MOS Technology. Dual P-Channel High Density Trench MOSFET TM4953S TM4953FS(Pb-free) PRODUCT SUMMARY VDSS ID RDS...
Datasheet PDF File TM4953S PDF File

TM4953S
TM4953S

Overview
TECH MOS Technology.
Dual P-Channel High Density Trench MOSFET TM4953S TM4953FS(Pb-free) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max - 30V - 4.
9A - 3.
6A 53 @ VGS = - 10V 95 @ VGS = - 4.
5V FEATURES ●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.
So-8 D1 D1 D2 D2 876 5 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 ± 20 - 4.
9 - 20 - 1.
7 2.
0 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta ：Note ：a.
Surface Mounted on FR4 Board , t ≤ 10sec .
b.
Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% .
RthJA 62.
5 °C/W DS-TM4953FS-02 Apr.
, 2007 1 TM4953S TM4953FS(Pb-free) ELECTRICAL CHARACTER...


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