HFD6N40S / HFU6N40S July 2009 HFD6N40S / HFU6N40S 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 0.
83 Ω ID = 4.
5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 16 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
83 Ω (Typ.
) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD6N40S 1 2 3 HFU6N40S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Conti...

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