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HFD6N40S

SemiHow
Part Number HFD6N40S
Manufacturer SemiHow
Description 400V N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFD6N40S / HFU6N40S July 2009 HFD6N40S / HFU6N40S 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 0.83 Ω ID = 4.5 A...
Datasheet PDF File HFD6N40S PDF File

HFD6N40S
HFD6N40S

Overview
HFD6N40S / HFU6N40S July 2009 HFD6N40S / HFU6N40S 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 0.
83 Ω ID = 4.
5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 16 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
83 Ω (Typ.
) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD6N40S 1 2 3 HFU6N40S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 400 4.
5 2.
7 18 ±30 280 4.
5 4.
8 4.
5 PD TJ, TSTG TL Power Dissipation...


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