Part Number
|
HFI640 |
Manufacturer
|
SemiHow |
Description
|
200V N-Channel MOSFET |
Published
|
Jun 7, 2015 |
Detailed Description
|
HFW640 / HFI640
Mar 2008
HFW640 / HFI640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.145Ω ID = 18 A
FEATURES...
|
Datasheet
|
HFI640
|
Overview
HFW640 / HFI640
Mar 2008
HFW640 / HFI640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.
145Ω ID = 18 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
145 Ω (Typ.
) @VGS=10V 100% Avalanche Tested
D2-PAK I2-PAK
2
1 3
HFW640
1 2 3
HFI640
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC ...
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