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HFI6N90

Part Number	HFI6N90
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Mar 26, 2016
Detailed Description	HFW6N90_HFI6N90 March 2013 HFW6N90 / HFI6N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalan...
Datasheet	HFI6N90 PDF File

Overview

HFW6N90_HFI6N90 March 2013 HFW6N90 / HFI6N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 1.
95 ȍ7\S#9GS=10V 100% Avalanche Tested BVDSS = 900 V RDS(on) typ = 1.
95 ȍ ID = 6.
0 A D2-PAK I2-PAK HFW6N90 HFI6N90 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 900 6.
0 3.
8 24 ρ30 650 6.
0 16.
7 4.
5 PD TJ, TSTG TL Power Dissipation (TA = 25ଇ) * Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 3.
13 167 1.
33 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/ఁ͑ ఁ͑ ఁ͑ Thermal Resistance Characteristics Symbol RșJC RșJA RșJA Junction-to-Case Parameter Junction-to-Ambient* Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
0.
75 40 62.
5 Units ఁ͠Έ͑ క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡ HFW6N90_HFI6N90 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ͑ VGS = 10 V, ID = 3.
0 A͑ 2.
5 -- Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forw...

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HFI6N90 N-Channel MOSFET - SemiHow

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