Part Number
|
HFD1N60S |
Manufacturer
|
SemiHow |
Description
|
N-Channel MOSFET |
Published
|
Jun 7, 2015 |
Detailed Description
|
HFD1N60S / HFU1N60S
Sep 2009
HFD1N60S / HFU1N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A
F...
|
Datasheet
|
HFD1N60S
|
Overview
HFD1N60S / HFU1N60S
Sep 2009
HFD1N60S / HFU1N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.
0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.
0 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 10 Ω (Typ.
) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD1N60S
1 2 3
HFU1N60S
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuou...
Similar Datasheet