Part Number
|
HFD1N65S |
Manufacturer
|
SemiHow |
Description
|
N-Channel MOSFET |
Published
|
Jun 7, 2015 |
Detailed Description
|
HFD1N65S / HFU1N65S
HFD1N65S / HFU1N65S
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Ru...
|
Datasheet
|
HFD1N65S
|
Overview
HFD1N65S / HFU1N65S
HFD1N65S / HFU1N65S
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.
0 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 10.
5 Ω (Typ.
) @VGS=10V
April 2009
BVDSS = 650 V RDS(on) typ = 10.
5 Ω ID = 0.
9 A
D-PAK I-PAK
2
1 3
HFD1N65S
1 2 3
HFU1N65S
1.
Gate 2.
Drain 3.
Source
D
G
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25...
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