Part Number
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HFB1N70 |
Manufacturer
|
SemiHow |
Description
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N-Channel MOSFET |
Published
|
Jun 7, 2015 |
Detailed Description
|
HFB1N70
Jan 2007
HFB1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 10.3 Ω ID = 0.3 A
FEATURES
Originative ...
|
Datasheet
|
HFB1N70
|
Overview
HFB1N70
Jan 2007
HFB1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 10.
3 Ω ID = 0.
3 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 10.
3 Ω (Typ.
) @VGS=10V 100% Avalanche Tested
TO-92
1 23
1.
Gate 2.
Drain 3.
Source D
G
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed...
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