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HFB1N60

SemiHow
Part Number HFB1N60
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFB1N60 Nov 2007 HFB1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.4 A FEATURES ‰ Originative N...
Datasheet PDF File HFB1N60 PDF File

HFB1N60
HFB1N60

Overview
HFB1N60 Nov 2007 HFB1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.
4 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 4.
0 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-92 1 2 3 1.
Gate 2.
Drain 3.
Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 0.
4 0.
25 1.
6 ρ30 50 0.
4 0.
3 5.
5 PD TJ, TSTG TL Power Dissipation (TA = 25ଇ) Power Dissipation (TC = 25ଇ) - Derate ...


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