HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.
12 Ω ID = 9.
0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 55 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 1.
12 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note...

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