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HFH9N90

HUASHAN ELECTRONIC
Part Number HFH9N90
Manufacturer HUASHAN ELECTRONIC
Description N-Channel Enhancement Mode Field Effect Transistor
Published Dec 7, 2016
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor █ General Desc...
Datasheet PDF File HFH9N90 PDF File

HFH9N90
HFH9N90

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
HFH9N90 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
█ Features • 9A, 900V(See Note), RDS(on) <1.
4Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-3P 1- G 2-D 3-S Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Operating Junction Temperature ------------------------...


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