Ordering number:EN1615C
NPN Triple Diffused Planar Silicon
Transistor
2SC3637
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High reliability (Adoption of HVP process).
· Fast speed.
· High breakdown voltage.
· Adoption of MBIT process.
Package Dimensions
unit:mm 2022A
[2SC3637]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Con...