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C3611

Panasonic Semiconductor
Part Number C3611
Manufacturer Panasonic Semiconductor
Description 2SC3611
Published Aug 21, 2014
Detailed Description Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier 8.0+–00..15 Unit: mm 3.2±0.2 ■ Featu...
Datasheet PDF File C3611 PDF File

C3611
C3611

Overview
Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier 8.
0+–00.
.
15 Unit: mm 3.
2±0.
2 ■ Features φ 3.
16±0.
1 3.
8±0.
3 11.
0±0.
5 3.
05±0.
1 • High transition frequency fT • Small collector output capacitance (Common base, input open cir- cuited) Cob • Wide current range • TO-126B package which requires no insulation plate for installa- tion to the heat sink 1.
9±0.
1 16.
0±1.
0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e.
d typ Collector-base voltage (Emitter open) VCBO 110 V n d stag tinue Collector-emitter voltage le n (Resistor between B and E) VCER 100 V a elifecyc disco Collector-emitter voltage (Base open) VCEO 50 V n u t ed, Emitter-base voltage (Collector open) VEBO 3.
5 V roduc d typ Collector current IC 150 mA te tin ur P tinue Peak collector current ICP 300 mA g fo con Collector power dissipation PC 1.
2 W win dis 4.
0 * in n follo ned Junction temperature des , pla Storage temperature Tj 150 °C Tstg −55 to +150 °C a o inclu type Note) *: With a 100 × 100 × 2 mm Al heat sink M isccontinueindtenance ■ Electrical Characteristics Ta = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-base voltage (Emitter open) ten ce Collector-emitter voltage ain nan (Resistor between B and E) VCBO VCER IC = 100 µA, IE = 0 IC = 500 µA, RBE = 470 Ω M inte Collector-emitter voltage (Base open) ma Emitter-base voltage (Collector open) (planed Collector-emitter cutoff current (Base open) VCEO VEBO ICEO IC = 1 mA, IB = 0 IE = 100 µA, IC = 0 VCE = 35 V, IB = 0 0.
75±0.
1 0.
5±0.
1 4.
6±0.
2 2.
3±0.
2 0.
5±0.
1 1.
76±0.
1 123 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Min Typ Max Unit 110 V 100 V 50 V 3.
5 V 10 µA Forward current transfer ratio hFE VCE = 5 V, IC = 100 mA 20  Collector-emitter saturation voltage VCE(sat) IC = 150 mA, IB = 15 mA 0.
5 V Transition frequency fT1 VCB = 10 V, IE = −10 mA, f = 200 MHz 300 MHz fT2 VCB = 10 V, IE ...


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