Ordering number:ENN1720A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1415/2SC3645
High-Voltage Switching, Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage (VCEO=160V).
· Excellent linearity of hFE and small Cob.
· Fast switching speed.
· Ultrasmall size marking it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1415/2SC3645]
4.
5 1.
6 1.
5
1.
0 2.
5 4.
25max
( ) : 2SA1415
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Tem...