Ordering number:EN1854A
NPN Epitaxial Planar Silicon
Transistor
2SC3661
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers, muting circuit.
Features
· Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer.
· Adoption of FBET process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.
5V).
· High VEBO (VEBO≥15V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperatur...