Ordering number:EN3486
NPN Epitaxial Planar Silicon
Transistor
2SC4695
Low-Frequency General-Purpose Amplifier, Muting Applications
Features
· Adoption of FBET process.
· High DC current gain.
· High VEBO (VEBO≥25V).
· High reverse hFE (150 typ).
· Small ON resistance [Ron=1Ω (IB=5mA)].
· Very small-sized package permitting 2SC4695-
applied sets to be made small and slim.
Package Dimensions
unit:mm 2018B
[2SC4695]
0.
4 3
0.
16 0 to 0.
1
0.
5 1.
5 0.
5 2.
5
1 0.
95 0.
95 2 1.
9 2.
9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissip...