TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications Power Amplifier Applications
2SC2881
Unit: mm
• High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.
) • Small flat package
• PC = 1.
0 to 2.
0 W (mounted on ceramic substrate) • Complementary to 2SA1201
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
120 120
5 800 160 500
1000
150 −55 to 150
V V V mA mA
mW
°C °C
PW-MINI JED...