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C2814

ON Semiconductor
Part Number C2814
Manufacturer ON Semiconductor
Description 2SC2814
Published Feb 15, 2016
Detailed Description Ordering number : ENN693F 2SC2814 NPN Epitaxial Planar Silicon Transistors High-Friquency General-Purpose Amplifier Ap...
Datasheet PDF File C2814 PDF File

C2814
C2814

Overview
Ordering number : ENN693F 2SC2814 NPN Epitaxial Planar Silicon Transistors High-Friquency General-Purpose Amplifier Applications Features · Ultrasmall package enabiling compactness and slimness of sets.
· High fT and small cre (fT=320MHz typ, cre=0.
95pF typ).
Package Dimensions unit:mm 2018B [2SC2814] 0.
4 3 0.
16 0 to 0.
1 1.
5 0.
5 2.
5 0.
5 1 0.
95 0.
95 2 1.
9 2.
9 0.
8 1.
1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Base-to-Collector Time Constant Noise Figure Power Gain ICBO IEBO hFE fT Cre rbb'CC NF PG * : The 2SC2814 are classified as follows by hFE at 1mA : (Note) Marking : F hFE rank : 2, 3, 4, 5 Conditions Conditions VCB=10V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, f=1MHz VCE=6V, IC=1mA, f=31.
9MHz VCE=6V, IC=1mA, f=100MHz VCE=6V, IC=1mA, f=100MHz Rank hFE 2 40 to 80 3 60 to 120 1 : Base 2 : Emitter 3 : Collector SANYO : CP Ratings 30 20 5 30 150 125 –55 to +125 Unit V V V mA mW ˚C ˚C Ratings min typ 40* 200 320 0.
7 0.
95 12 3.
0 25 max 0.
1 0.
1 270* 1.
2 20 Unit μA μA MHz pF ps dB dB 45 90 to 180 135 to 270 © 2011, SCILLC.
All rights reserved.
Jan-2011, Rev.
0 www.
onsemi.
com Publication Order Number: 2SC2814/D 2SC2814 NF, PG Test Circuit to 5pF INPUT 50Ω to 30pF to 22pF L1 to 22pF to 30pF OUTPUT L2 50Ω Collector Current, IC – mA DC Current Gain, hFE VBE VCE L1 : 1mmø plated wire 10mmø 4T, tap : 2T from VBE side.
L2 : 1mmø plated wire 10mmø 7T, tap : 1T from VCE side.
L3 : 1mmø enameled wire 10mmø 3T.
Base Current, IB – μA 5 IC -- VCE 30μA 4 25μA 20μA 3 15μA 2 10μA 100 IB -- VBE VCE=6V 80 60 40 1 5μA 20 0 0 1000 7 5 3 2 ...


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