DATA SHEET
SILICON POWER
TRANSISTOR
2SC3518-Z
NPN SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
FEATURES
• High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.
09 V TYP.
• Complement to 2SA1385-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (DC)
IC(DC)
5
A
Collector Current (pulse) Note 1
IC(pulse)
7
A
Total Power Dissipation (TA = 25°C) Note 2 PT
2.
0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150 °C...