FDD6637_F085 P-Channel PowerTrench® MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Features „ Typ rDS(on) = 9.
7mΩ at VGS = -10V, ID =- 14A „ Typ rDS(on) = 14.
4mΩ at VGS = -4.
5V, ID =- 11A „ Typ Qg(10) = 45nC at VGS = -10V „ High performance trench technology for extremely low rDS(on).
„ Qualified to AEC Q101 „ RoHS Compliant Applications „ Inverter „ Power Supplies „ „ December 2010 ©2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev.
C 1 www.
fairchildsemi.
com FDD6637_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain to Source Voltage VDS(Avalanche) Drain to Source Avalanche Voltage ...

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