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FDD6637_F085

Fairchild Semiconductor
Part Number FDD6637_F085
Manufacturer Fairchild Semiconductor
Description P-Channel PowerTrench MOSFET
Published Jun 17, 2015
Detailed Description FDD6637_F085 P-Channel PowerTrench® MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Features „ Typ ...
Datasheet PDF File FDD6637_F085 PDF File

FDD6637_F085
FDD6637_F085

Overview
FDD6637_F085 P-Channel PowerTrench® MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Features „ Typ rDS(on) = 9.
7mΩ at VGS = -10V, ID =- 14A „ Typ rDS(on) = 14.
4mΩ at VGS = -4.
5V, ID =- 11A „ Typ Qg(10) = 45nC at VGS = -10V „ High performance trench technology for extremely low rDS(on).
„ Qualified to AEC Q101 „ RoHS Compliant Applications „ Inverter „ Power Supplies „ „ December 2010 ©2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev.
C 1 www.
fairchildsemi.
com FDD6637_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain to Source Voltage VDS(Avalanche) Drain to Source Avalanche Voltage (maximum) VGS Gate to Source Voltage ID Drain Current Continuous (TC < 155oC, VGS = 10V) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Dreate above 25oC Operating and Storage Temperature Thermal Characteristics (Note 1) Ratings -35 -45 ±25 -21 See Figure 4 61 68 0.
46 -55 to + 175 Units V V V A mJ W W/oC oC RθJC RθJA Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2.
2 40 oC/W oC/W Package Marking and Ordering Information Device Marking Device FDD6637 FDD6637_F085 Package TO-252 Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Off Characteristics Test Conditions Min BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current On Characteristics ID = 250μA, VGS = 0V VDS = -28V, VGS = 0V VGS = ±25V -35 - VGS(th) Gate to Source Threshold Voltage rDS(on) Drain to Source On Resistance gFS Forward Transconductance Dynamic Characteristics VGS = VDS, ID = -250μA ID = -14A, VGS= -10V ID = -11A, VGS= -4.
5V ID = -14A, VGS= -10V, TC = 150oC VDS = -5V, ID = -14A -1 - Ciss Coss Crss RG Qg(TOT) Qg(5) Qgs Qgd Input Capacitance Output Cap...


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