Silicon
PNP Triple Diffused Type
FEATURES
Low Saturation Voltage:VCE(sat)=-1.
5V(max.
)
(IC/IB=-2A/-0.
2A)
Pb
High Power Dissipation:PC=25W(TC=25℃) Lead-free
Complements the 2SD2012.
Production specification
2SB1375
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO VEBO IC IB PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Ta=25℃ Tc=25℃
Junction and Storage Temperature
-60 V
-7 V
-3 A
-0.
5 A 2.
0
W 25 -55 to +150 ℃
X015 Rev.
A
www.
gmesemi.
com
1
Production specification
Silicon
PNP Triple Diffused Ty...