G7PH42U-EP

INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range of applications • Suitable for a wid...