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G7PH42U-EP

International Rectifier
Part Number G7PH42U-EP
Manufacturer International Rectifier
Description IRG7PH42U-EP
Published Jun 26, 2015
Detailed Description INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum juncti...
Datasheet PDF File G7PH42U-EP PDF File

G7PH42U-EP
G7PH42U-EP

Overview
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation Applications • U.
P.
S • Welding • Solar inverter • Induction heating C G E n-channel PD - 96233A IRG7PH42UPbF IRG7PH42U-EP VCES = 1200V IC = 60A, TC = 100°C TJ(max) =175°C VCE(on) typ.
= 1.
7V CC GC E TO-247AC IRG7PH42UPbF GC E TO-247AD IRG7PH42U-EP G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Contin...


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