OptiMOS(TM)3 Power-
Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Type
IPD135N08N3 G
IPD135N08N3 G
Product Summary VDS RDS(on),max ID
80 V 13.
5 mW 45 A
Package Marking
PG-TO-252-3 135N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single puls...