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IPD135N08N3

Part Number	IPD135N08N3
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.5mΩ ·...
Datasheet	IPD135N08N3 PDF File

Overview

isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.
5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 45 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 79 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal res...

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