TPCS8004
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSV)
TPCS8004
High-Speed Switching Applications Switching
Regulator Applications DC-DC Converter Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 0.
56 Ω (typ.
) • High forward transfer admittance: |Yfs| = 1.
8 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) • Enhancement model: Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation ...