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TPCS8004

Toshiba Semiconductor
Part Number TPCS8004
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TPCS8004 High-Speed Switching Applications...
Datasheet PDF File TPCS8004 PDF File

TPCS8004
TPCS8004


Overview
TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TPCS8004 High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 0.
56 Ω (typ.
) • High forward transfer admittance: |Yfs| = 1.
8 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) • Enhancement model: Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy(Note3) Avalanche current Repetitive avalanche energy (Note2a, Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg 200 200 ±20 1.
3 5.
2 1.
5 0.
6 1.
0...



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