TK55D10J1
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK55D10J1
Switching
Regulator Applications
• High-Speed switching • Low gate charge: Qg = 110 nC (typ.
) • Low drain-source ON resistance: RDS (ON) = 8.
4 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 110 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) • Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
10.
0±0.
3 9.
5±0.
2
A Ф3.
65±0.
2
0.
6±0.
1
3.
2 2.
8
15.
0±0.
3
9.
0
1.
1±0.
15
0.
75±0.
25
2.
8Max.
12.
8±0.
5
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (No...