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TK55D10J1

Toshiba Semiconductor
Part Number TK55D10J1
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK55D10J1 Switching Regu...
Datasheet PDF File TK55D10J1 PDF File

TK55D10J1
TK55D10J1

Overview
TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK55D10J1 Switching Regulator Applications • High-Speed switching • Low gate charge: Qg = 110 nC (typ.
) • Low drain-source ON resistance: RDS (ON) = 8.
4 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 110 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) • Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 10.
0±0.
3 9.
5±0.
2 A Ф3.
65±0.
2 0.
6±0.
1 3.
2 2.
8 15.
0±0.
3 9.
0 1.
1±0.
15 0.
75±0.
25 2.
8Max.
12.
8±0.
5 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (No...


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