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Part Number
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BLV830 |
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Manufacturer
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BELLING |
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Description
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N-Channel Enhancement Mode Power MOSFET |
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Published
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Jul 19, 2015 |
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Detailed Description
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BLV830
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requirement...
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Datasheet
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BLV830
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Overview
BLV830
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requirements
BVDSS RDS(ON) ID
500V 1.
5Ω 4.
5A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol VDS VGS
ID
IDM
PD
EAS IAR EAR Tj TSDG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Opera...
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