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BLV840

BELLING
Part Number BLV840
Manufacturer BELLING
Description N-Channel Enhancement Mode Power MOSFET
Published Jul 19, 2015
Detailed Description BLV840 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirement...
Datasheet PDF File BLV840 PDF File

BLV840
BLV840

Overview
BLV840 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 500V 0.
85Ω 8.
0A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operating Junction Temperature Range Storage Temperature Range Value 500 + 20 8.
0 5.
1 32 125 1.
0 790 8.
0 13 -55 to +150 -55 to +150 Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Max.
Thermal Resistance, Junction to Ambient Max.
Value 1.
0 62.
5 http://www.
belling.
com.
cn Page 1/6 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV840 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance(note3) Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Current Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS=0V, ID=250uA Reference to 25℃, ID=1mA VGS=10V, ID=4.
8A VDS=VGS, ID=250uA VDS=50V, ID=4.
8A VDS=500V, VGS=0V VDS=400V, VGS=0V VGS= ± 20V VDD=400V ID=8.
0A VGS=10V note3 Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=250V ID=8.
0A RG=25Ω note3 Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=25V...


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