Part Number
|
BLV1N60 |
Manufacturer
|
BELLING |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Jul 19, 2015 |
Detailed Description
|
BLV1N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requiremen...
|
Datasheet
|
BLV1N60
|
Overview
BLV1N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified • Fast Switching • Simple Drive Requirements
BVDSS RDS(ON) ID
600V 8Ω 1A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol VDS VGS
ID
IDM
PD
EAS IAR EAR Tj TSDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 oC)
Drain Current (pulsed)
(Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Ava...
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