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BLV1N60

BELLING
Part Number BLV1N60
Manufacturer BELLING
Description N-Channel Enhancement Mode Power MOSFET
Published Jul 19, 2015
Detailed Description BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requiremen...
Datasheet PDF File BLV1N60 PDF File

BLV1N60
BLV1N60


Overview
BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 8Ω 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Ava...



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