RF Power Field Effect Transistors
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Character...
Freescale Semiconductor