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MRF8P26080HSR3

Part Number	MRF8P26080HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 21, 2015
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs ...
Datasheet	MRF8P26080HSR3 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.
3 Vdc, Pout = 14 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 2570 MHz 2595 MHz 2620 MHz Gps (dB) 15.
4 15.
2 15.
0 ηD Output PAR ACPR (%) (dB) (dBc) 39.
1 6.
8 --33.
6 38.
2 6.
8 --36.
0 36.
9 6.
8 --40.
0 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 83 Watts CW Features • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p.
13.
Document Number: MRF8P26080H Rev.
0, 12/2010 MRF8P26080HR3 MRF8P26080HSR3 2500--2700 MHz, 14 W AVG.
, 28 V W--CDMA, LTE LATERAL N--CHANNEL RF POWER MOSFETs CASE 465M--01, STYLE 1 NI--780--4 MRF8P26080HR3 CASE 465H--02, STYLE 1 NI--780S--4 MRF8P26080HSR3 RFinA/VGSA 3 RFinB/VGSB 4 1 RFoutA/VDSA 2 RFoutB/VDSB (Top View) Figure 1.
Pin Connections Table 1.
Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CW Operati...

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MRF8P26080HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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