Part Number
|
LBAS16TT3G |
Manufacturer
|
Leshan Radio Company |
Description
|
Silicon Switching Diode |
Published
|
Jul 29, 2015 |
Detailed Description
|
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product compliance with Ro...
|
Datasheet
|
LBAS16TT3G
|
Overview
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBAS16TT1G S-LBAS16TT1G
MAXIMUM RATINGS (TA = 25oC)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current Pulse Width = 10 µs
Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm)
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient One Diod...
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